Micron announced its UFS 4.0 mobile storage solution and revealed that it has already shipped qualifying samples to “selected smartphone manufacturers and chipset vendors globally.”
The new technology will be used to produce storage in capacities of 256GB, 512GB and 1TB. High-volume production will begin in the second half of this year, so it will be some time before the first phones with Micron UFS 4.0 memory arrive.
This memory is built on 232-level TLC flash (triple-level cells, i.e. storing 3 bits per cell). According to the company, its six-story NAND architecture allows for higher random read throughput. Compared to the previous generation, the storage write bandwidth is 100% higher, the read bandwidth is 75% higher.
In more concrete numbers, Micron’s UFS 4.0 storage offers sequential read speeds of up to 4,300 Mbps and sequential write speeds of up to 4,000 Mbps. It is superior to Samsung’s UFS 4.0, especially the write rating.
In addition, the new UFS 4.0 chips are 25% more energy efficient and promise 10% lower write latency.
Are you ready for the next big thing? #mobile warehousing? Introducing Micron UFS 4.0 storage, built specifically for flagship smartphones. Based on advanced 232-layer 3D NAND, it delivers best-in-class performance and power in capacities up to 1TB. https://t.co/PWqS252Ccc pic.twitter.com/lnAXWFlwOW
— Micron Technology (@MicronTech) June 21, 2023
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